DR3051S-AP Pressure Transmitter

The DR3051S-AP adopts monocrystalline silicon pressure sensor technology and patented packaging process. The monocrystalline silicon pressure sensor is located at the top of the metal body, away from the medium contact surface, realizing mechanical isolation and thermal isolation; The sensor lead integrated with glass sintering realizes high-strength electrical insulation with metal matrix, and improves the flexibility of electronic circuit and the ability of transient voltage protection. The original packaging technology ensures that the dr3051 single crystal silicon pressure transmitter can easily cope with extreme chemical and mechanical loads. At the same time, it has strong anti electromagnetic interference ability, which is enough to cope with the most harsh industrial environment applications.